| PART |
Description |
Maker |
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五（巴西）国际消费电子展| 75A条一c
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| CPW235P CPW256P |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET功率模块|独立| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 14A I(D)
|
Atmel, Corp.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五（巴西）总裁| 50A条一（c
|
IXYS, Corp.
|
| 2DI50M-120 |
POWER TRANSISTOR MODULE
|
Fuji Electric
|
| 1DI300ZP-120 |
Power Transistor Module
|
Fuji Electric
|
| 1DI400A-120 |
POWER TRANSISTOR MODULE
|
http://
FUJI[Fuji Electric]
|
