PART |
Description |
Maker |
CGY41 |
HiRel L- and S-Band GaAs General Purpose Amplifier 伊雷尔L -S波段砷化镓通用放大
|
INFINEON[Infineon Technologies AG]
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
BXY43P-FP BXY43P |
Publications, Books RoHS Compliant: NA HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET 200 mA, 2 W, K-band power GaAs MESFET 400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC MIMIX[Mimix Broadband]
|
FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET X-Band Internally Matched FET
|
Eudyna Devices Inc SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|