| PART |
Description |
Maker |
| 1N3070 |
Leaded Silicon Diode Switching
|
Central Semiconductor
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
INVERTER 12V-INPUT 1700V-OUTPUT
Programmable Skew Clock Buffer
Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 1N4616D 1N4626 |
Leaded Zener Diode General Purpose
2.2 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
|
CENTRAL SEMICONDUCTOR CORP
|
| MMBD4448HW-7-F |
Switching Diodes
SURFACE MOUNT SWITCHING DIODE 0.25 A, 80 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| 1N962 1N963 1N967 1N978 1N957 1N958 1N959 1N960 1N |
30 V, 4.2 mA, silicon planar zener diode
7.5 V, 16.5 mA, silicon planar zener diode
SILICON PLANAR ZENER DIODES
14PX2R TH STRAIGHT
CONN, 3PX1R TH STRAIGHT
CONN. 2 POSITIONS ALIGNED 2.54MM
1X30FT SELF-FUSING TAPE
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 硅平面稳压二极管
CONN HDR 8POS RT ANG POST 硅平面稳压二极管
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Wire Wrap; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
10 V, 12.5 mA, silicon planar zener diode
39 V, 3.2 mA, silicon planar zener diode
6.8 V, 18.5 mA, silicon planar zener diode
|
http://
SEMTECH[Semtech Corporation]
Semtech, Corp.
Honey Technology
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
AVALANCHE DIODE SOD57 STD-E2
Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
| CMEDA-6I |
SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY 0.25 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
|
| CMAD6001 CMAD6001TR |
SURFACE MOUNT SILICON ULTRA LOW LEAKAGE SWITCHING DIODE
0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| CSSD2003 |
Leaded Silicon Diode High Voltage
|
Central Semiconductor
|
|
