| PART |
Description |
Maker |
| IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| 2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V.
35A silicon controlled rectifier. Vrsom 400V.
35A silicon controlled rectifier. Vrsom 150V.
35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
| IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| P131 P133 |
Silicon Controlled Rectifier, 28 A, 400 V, SCR
Silicon Controlled Rectifier, 28 A, 800 V, SCR
|
Vishay Semiconductors
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| S2060C S2061D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V.
4A sensitive-gate silicon controlled rectifier. Vrsxm 500V.
|
General Electric Solid State
|
| 08003GOD 08003GOB |
Silicon Controlled Rectifier
|
Microsemi
|
|
