PART |
Description |
Maker |
CAT28C64BWI-12 CAT28C64BGI12 CAT28C64BXA-90 CAT28C |
64 kb CMOS Parallel EEPROM 8K X 8 EEPROM 5V, 120 ns, PDSO28 64 kb CMOS Parallel EEPROM 8K X 8 EEPROM 5V, 120 ns, PQCC32 8K X 8 EEPROM 5V, 90 ns, PDSO28 8K X 8 EEPROM 5V, 90 ns, PDIP28
|
ON Semiconductor
|
WF128K32-50H1C5A WF128K32-50G2UC5 WF128K32-50G1TI5 |
EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC EEPROM|FLASH|128KX32|CMOS|PGA|66PIN|CERAMIC EEPROM EEPROM
|
Aeroflex, Inc.
|
93LC46-I/P 93LC66-I/SN 93LC66I/P 93LC66I/SN |
SERIAL EEPROM|128X8/64X16|CMOS|DIP|8PIN|PLASTIC SERIAL EEPROM|512X8/256X16|CMOS|SOP|8PIN|PLASTIC 1K/2K/4K 2.5 V Serial EEPROM(397.55 k) 1K/2K/4K 2.5伏串行EEPROM97.55十一
|
Linx Technologies, Inc.
|
PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 120NS, SOIC, IND TEMP(EEPROM) 70NS, PDIP, IND TEMP(EEPROM) 120NS, TSOP, COM TEMP(EEPROM) 200NS, PLCC, COM TEMP(EEPROM) DIE(EEPROM) 90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM) 120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM) 120NS, PLCC, IND TEMP(EEPROM) X32号,闪存EEPROM模块 x32 Flash EEPROM Module X32号,闪存EEPROM模块
|
Lattice Semiconductor, Corp. Amphenol, Corp.
|
25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
|
http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
CAT93C46MI1.8TE13 CAT93C56MI1.8TE13 CAT93C46M1.8 C |
4M Pixel CMOS Image Sensor EZ-USB AT2LP USB 2.0 to ATA/ATAPI Bridge 6.6 MP CMOS Image Sensor EEPROM EEPROM EEPROM
|
Intel, Corp.
|
CAT24WC256P1TE13 CAT24WC256P3TE13 CAT24WC256P8TE13 |
Serial CMOS EEPROM, Full Array Write Protect, 256Kb 256K-Bit I2C Serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
CAT28C512HI-12 CAT28C512GI-12 CAT28C512GI12 CAT28C |
512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PDSO32 512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PQCC32 64K X 8 EEPROM 5V, 150 ns, PDSO32
|
ON Semiconductor
|
AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28 64K 8K x 8 CMOS E2PROM 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 64K EEPROM with 64-Byte Page & Software Data Protection 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection From old datasheet system 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|