| PART |
Description |
Maker |
| PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
| CAT93W66 CAT93C6612KI-28TE13 CAT93W66VP2I-GT3 CAT9 |
4 kb Microwire Serial CMOS EEPROM Self?timed Write Cycle with Auto?clear
4 kb Microwire Serial CMOSEEPROM
|
ON Semiconductor
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| AT34C02B |
2K, 2-wire Bus Serial EEPROM with permanent software write protection and reversible software write protection.
|
Atmel
|
| SSI32R2020R-4CL SSI32R2020R-4CV SSI32R2020R-6CV SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
10-Channel Disk Read/Write Circuit 10通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
DB Lectro, Inc.
Lattice Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| ADXL210E ADXL210JE ADXL210AE ADXL210 |
0 g Dual Axis Accelerometer with Duty Cycle Outputs
ADXL210E: Low-Cost 10 g Dual-Axis Accelerometer with Duty Cycle Data Sheet (Rev. 0. 5/02)
|
AD[Analog Devices]
|
| VM710625CSSJ VM710820CPOJ VTCINC-VM710820POJ VM710 |
6 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24
8 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO36
2 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO16
|
VTC INC
|
| VM310R-4PO VM310-6PL VM310-6PO VM310R-6PO VM310R-6 |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
Electronic Theatre Controls, Inc.
|
