PART |
Description |
Maker |
M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
HM628128LP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
|
HN28F101FP-15 HN28F101P-12 HN28F101P-20 HN28F101R- |
131072-word 8-bit CMOS Flash Memory 131072-word ?? 8-bit CMOS Flash Memory 131072-word x 8-bit CMOS Flash Memory
|
ETC
|
M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ-15 |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
HN28F101SERIES 28F101 |
131072-word ′ 8-bit CMOS Flash Memory From old datasheet system
|
hitachi
|
M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位(131072字由16位)的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions 8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8,192字8位高速CMOS静态RAM
|
http:// SONY[Sony Corporation]
|
AT27BV4096 AT27BV4096-12JC AT27BV4096-12JI AT27BV4 |
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-PDIP -55 to 125 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 4 Megabit 256K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
TC55BS8128J-12 TC55BS8128J-10 |
131072 WORD X 8 BIT SYNCHRONOUS STATIC RAM
|
Toshiba Semiconductor
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|