| PART |
Description |
Maker |
| ST27C1001 |
1024K CMOS UV Erasable PROM
1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics
STMicroelectronics
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
Philips Semiconductors
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
| M25P05-AVMP6 M25P05-AVDW6T |
64K X 8 FLASH 2.7V PROM, DSO8 VDFPN-8
64K X 8 FLASH 2.7V PROM, PDSO8
|
ST Microelectronics
NUMONYX
|
| W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 3.05X1.51X1.05 W/1 BTN ALMOND
FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IS25C64A IS25C64A-2GI IS25C64A-2GLI IS25C64A-2PI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM 8K X 8 SPI BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
http://
|
| IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
| 8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破
Memory, Digital, Bipolar, 64K PROM
|
N/A
|
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
