| PART |
Description |
Maker |
| PN10-8FF-L PN10-10FF-D |
12-10 BARREL NYLON INSUL FLANGED FORK 225 5.72 MAX WIRE INSUL DIA
COPPER ALLOY, TIN FINISH, FORK TERMINAL
|
PANDUIT CORP.
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| TM90SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM400HA-24 TM400HA-2H TM400HA-H TM400HA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM30TA-H RM30TA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| TM10T3B-H TM10T3B-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| TM20DA-H TM20DA-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM15TA-24 RM15TA-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM75TPM-24 RM75TPM-H RM75TPM-M RM75TPM-M09 RM75TPM |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RM20TPM-24 RM20TPM-2402 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| TM60SZ-M |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
