PART |
Description |
Maker |
NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp. NEC, Corp.
|
NE13700 NE13783S NE13783-4 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET
|
NEC
|
MA01503D_1 |
X-Band Limiter/Low Noise Amplifier 8.5 -12.0 GHz
|
MACOM[Tyco Electronics]
|
UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier Low Noise Amplifier 1.5 - 1.6 GHz GT 35C 7#12,28#16 SKT RECP
|
MA-Com MACOM[Tyco Electronics]
|
AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier 16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
EC3H01B |
VHF Band Low-Noise Amplifer and OSC Applications 甚高频波段低噪声放大器和OSC应用 NPN Epitaxial Planar Silicon Transistor VHF Band Low-Noise Amplifer and OSC Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TLT-13-6013 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|