| PART |
Description |
Maker |
| MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG20J906H MIG20J906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MG600Q2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG50Q2YS91 |
GTR Module Silicon N-Channel IGBT
|
Toshiba
|
| MG15J6ES40 |
GTR Module / Silicon N-Channel IGBT
|
Toshiba
|
| MP6759 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG1200FXF1US51 |
TOSHIBA GTR Module Silicon N-Channel IGBT 东芝滋养模块硅N沟道IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MIG75J201H |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT 东芝智能功率模块IGBT的硅频道
|
Toshiba, Corp.
Toshiba Semiconductor
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
