PART |
Description |
Maker |
S72WS-N S72WS512NEG-LY S72WS512NFG-LY S72WS512NFG- |
Based MCP/PoP Products 基于MCP流行产品 Based MCP/PoP Products SPECIALTY MEMORY CIRCUIT, PBGA137
|
Spansion Inc. Spansion, Inc.
|
BU9831/F |
Memory LSIs > EEPROM application products > Non-volatile electronic potentiometer
|
ROHM
|
RX6000 |
RFM products are now Murata products
|
Murata Manufacturing Co...
|
HS00-99150 HS92-A1041 HS00-03092 HS00-00044 HS92-0 |
10Base Networking Products 10Base网络产品 10Base Networking Products DATACOM TRANSFORMER FOR 10 BASE-T APPLICATION(S)
|
BI Technologies Corporation BI Technologies, Corp.
|
096735-000 989523-000 441753-000 926935-000 991984 |
RAYCHEM Tubing Products 4.20mm (.165) Pitch Mini-Fit Jr. Header, Dual Row, Vertical, with Snap-in Plastic Peg PCB Lock RAYCHEM Tubing Products
|
Tyco Electronics
|
FPF2001 FPF2003 FPF2002 FPF2000 FPF2005 FPF2004 FP |
IntelliMAX?/a> Advanced Load Management Products IntelliMAX⑩ Advanced Load Management Products IntelliMAX Advanced Load Management Products IntelliMAXAdvanced Load Management Products IntelliMAX?Advanced Load Management Products
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
FPF212306 FPF2125 FPF2123 FPF2124 |
IntelliMAX?/a> Advanced Load Management Products IntelliMAX⑩ Advanced Load Management Products
|
FAIRCHILD[Fairchild Semiconductor]
|
UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Silicon NPN epitaxial planar type
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor Panasonic Corporation
|
AMK063AB7106MP-T AMK063ABJ106MP-T AMK063AB7106KP-T |
Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products
|
Taiyo Yuden (U.S.A.), Inc
|