| PART |
Description |
Maker |
| M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
| MB8417-20 MB8417-20L |
CMOS 16384-Bit Static RAM
|
Fujitsu
|
| HN27128AG-17 |
16384-word x 8-Bit UV Erasable Programmable ROM
|
Hitachi Semiconductor
|
| M5L2716K |
16384-Bit Reasable and Electrically Reprogrammable ROM
|
Mitsubishi Electric
|
| AM9112APC AM9112ADC |
SRAM,256X4,MOS,DIP,16PIN,PLASTIC
SRAM,256X4,MOS,DIP,16PIN,CERAMIC
From old datasheet system
|
AMD Inc
|
| LC87F1HC8A |
CMOS IC 128K-byte FROM and 16384-byte RAM integrated 8-bit 1-chip Microcontroller with USB-host controller
|
Sanyo Semicon Device
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| ENA1189 |
CMOS IC 128K/96K-byte ROM and 16384-byte RAM integrated 8-bit 1-chip Microcontroller with USB-host controller
|
Sanyo Semicon Device
|
| M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
