| PART |
Description |
Maker |
| GVT71256ZC36 |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
| K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7P803611B K7P803611B-HC33 K7P803611B-HC30 K7P8018 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
| GVT71256ZB36 |
(GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM
|
Cypress Semiconductor
|
| GVT71512B18 GVT71256B36 |
(GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
|
Cypress Semiconductor
|
| KM736V890 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|