| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33- |
128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns
|
CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
|
| M24L216128SA-70BEG M24L216128SA-70BIG M24L216128SA |
128K X 16 PSEUDO STATIC RAM, 55 ns, PDSO44 0.400 INCH, LEAD FREE, TSOP2-44
2-Mbit (128K x 16) Pseudo Static RAM
|
Sharp Electronics, Corp.
Elite Semiconductor Memory Technology Inc.
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| CY7C1009B CY7C109B-35VI CY7C109B-20ZC CY7C109BL-15 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS07; No. of Contacts:42; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
TV 6C 6#8(TWINAX) PIN RECP 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
TV 128C 128#22D PIN WALL REC 128K X 8 STANDARD SRAM, 25 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| CY7C09199V CY7C09199V-12AC CY7C09199V-6AC CY7C0919 |
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 8 DUAL-PORT SRAM, 18 ns, PQFP100
SM Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 11 A, Pin Plunger Actuator, Solder Termination
Memory
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT70V639S10BFI IDT70V639S15BF IDT70V639S12BFI IDT |
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128K的18 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 15 ns, PBGA208
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| IS62LV12816LL IS62LV12816L IS62LV12816L-55B IS62LV |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
