| PART |
Description |
Maker |
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| PV18-6R-CY PV18-6R-MY PV18-4R-CY PV18-4R-MY PV18-8 |
22-18 BARREL FUNNELED VINYL INSULATED RING TONGUE, .150(3.81) MAX WIRE INSULATION DIAMETER
TERM RING VNYL INS ROHS RoHS Compliant: Yes RING TERMINAL
TERM RING VINYL INS RoHS Compliant: Yes RING TERMINAL
TERM RING VINYL INS RING TERMINAL
Ring Tongue Solderless Terminal; Wire Size (AWG):22-18; Stud Size:#8; Insulator Color:Red; Mounting Hole Dia:.17"; Overall Length:0.91"; Overall Width:0.31"; Pack Quantity:1000; Stud/Tab Size:#8 RING TERMINAL
|
PANDUIT CORP.
Panduit, Corp.
|
| TIP122TU |
Medium Power Linear Switching Applications
|
Fairchild Semiconductor
|
| BD238 BD234 BD236 |
Medium Power Linear and Switching Applications
|
FAIRCHILD[Fairchild Semiconductor]
|
| QM50DY-2H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
| 2N6126 |
Medium Power Linear and Switching Applications
|
Boca Semiconductor Corporation
|
| CM50TF-28H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM30DY-HB QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM30TF-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| QM50TF-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
