| PART |
Description |
Maker |
| CNA1312K |
Opto-Electronic Device - PhotocouplersPhotosensors - Transmissive Photosensors
Transmissive Photosensors (Photo Interrupters)
|
Matsshita / Panasonic
|
| ON1004 CNA1302K |
Opto-Electronic Device - PhotocouplersPhotosensors - Transmissive Photosensors
Transmissive Photosensors (Photo Interrupters)
|
Matsshita / Panasonic
|
| CNB1009 ON2173 |
Reflective Photosensors (Photo Reflectors) 反射式光电传感器（图片反射）
Opto-Electronic Device - PhotocouplersPhotosensors - Reflective Photosensors(Photo Reflector)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
