PART |
Description |
Maker |
M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
M5M51008BKR-15VLL-I M5M51008BKR-12VLL M5M51008BKR- |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi
|
MH1S72CPG-15 MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG |
From old datasheet system 75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
|
M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM From old datasheet system
|
Mitsubishi
|
HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
HM5118165A HM5118165AJ-7 HM5118165AJ-8 HM5118165AT |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
TC55VBM416AFTN55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|
TC55W800FT |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
|
TC55W1600FT-70 TC55W1600FT TC55W1600FT-55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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