PART |
Description |
Maker |
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
TTP229 |
16 Key / 8 key touch detection IC
|
TONTEK
|
0480062111 48006-2111 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Brass Latch, Blue Housing, Phosphor Bronze Terminals, Single Key, with Beveled Metal Pins,2.5V Voltage Key MOLEX Connector
|
Molex Electronics Ltd.
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
IRFB5620PBF IRFB5620PBF-15 |
DIGITAL AUDIO MOSFET Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
0015040219 15-04-0219 2560-1 |
156 KK? Polarizing Key 156 KK庐 Polarizing Key MOLEX Connector
|
Molex Electronics Ltd.
|
MC44604 |
High Safety Standby Ladder Mode GreenLine PWM Cont
|
ON Semiconductor
|
0533980467 0533980267 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
0528932095 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|