| PART |
Description |
Maker |
| K6T1008C2EFAMILY |
128Kx8 bit Low Power CMOS Static RAM
|
Samsung Electronic
|
| KM681000EL KM681000ELG-7L |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
| K6T1008C2E-TF70T00 |
128Kx8 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
| 930104704 930104701 930104702 930104703 5962-89598 |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| MMC9-65608EV-30-E MMDJ-65608EV-30-E 5962-8959818QT |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX23C1100 23C1100 |
1M-BIT[128Kx8/64Kx16]CMOS MASK ROM
From old datasheet system
|
Macronix 旺宏
|
| 5962-8683001XX 5962-8683007YA 5962-8683007YX 5962- |
3-Pin Silicon Oscillator
Silicon Oscillator with Low-Power Frequency Select and Enable
128Kx8 EEPROM 128Kx8 EEPROM
|
MtronPTI
|
| IDTQS3L384SO IDTQS3L384Q QS3L384Q IDTQS3L384QG IDT |
QuikSwitch High-Speed Low Power CMOS 10-Bit Bus Switch
QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH 3L SERIES, 10-BIT DRIVER, TRUE OUTPUT, PDSO24
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| W27C01Q-70 W27C01P-70 |
EEPROM|128KX8|CMOS|TSSOP|32PIN|PLASTIC
EEPROM|128KX8|CMOS|LDCC|32PIN|PLASTIC
EPROM 存储
|
Harwin PLC
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
