| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI9802DY |
Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Dual N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4362BDY |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
|
Vaishali Semiconductor
|
| SI4820DY-T1 SI4820DY |
N-Channel, 30-V (D-S) MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
|
| SI4800BDY SI4800BDY-T1-E3 |
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
| DTP4N60 DTU4N60 |
Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
| IPL65R165CFD |
Reduced board space consumption
|
Infineon Technologies A...
|
