| PART |
Description |
Maker |
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| ADL5534-EVALZ ADL5534ACPZ-WP |
20 MHz to 500 MHz IF Gain Block 20 MHz00 MHz的中频增益模
20 MHz to 500 MHz IF Gain Block 20 MHz - 500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Analog Devices, Inc.
|
| UNCL-L1 |
Plug-In, Low Noise Active Mixer (Level -4(LO Power -4 dBm) 10 to 500 MHz) 10 MHz - 500 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| ADL5367 ADL5367-EVALZ ADL5367ACPZ-R7 |
500 MHz to 1700 MHz Balanced Mixer, LO Buffer and RF Balun; Package: LFCSP: Leadform Chip Scale; No of Pins: 20; Temperature Range: Ind 500 MHz - 1700 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Analog Devices, Inc.
http://
|
| ZFL-500 ZFL-500-BNC |
50Low Power 0.05 to 500 MHz 0.05 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Mini-Circuits
|
| APTM50AM24SCG |
150 A, 500 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes MOSFET Power Module
|
Microsemi Corporation
|
| ESML-2-1 ESML-2-1TR NJG1518KB2 NJG1518KB2-C5 NJG15 |
E-Series 2-Way 0Power Divider 5 - 500 MHz
E-Series 2-Way 0 Power Divider 5 - 500 MHz
ER 48C 48#16 PIN RECP BOX
CANCA3102E36-10PBF80F0
E系列2Σ功分5 - 500兆赫
|
http://
MACOM[Tyco Electronics]
|
| IRFK6H450 IRFK6H150 |
66 A, 500 V, 0.067 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
150 A, 100 V, 0.01 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
|
|
| MRF275G MRF275 |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
|
MACOM[Tyco Electronics]
|
| MRF151 |
RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
|
