| PART |
Description |
Maker |
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MCM6229A-35 MCM6229A-20 MCM6229A-25 MCM6229A MCM62 |
256K X 4 BIT STATIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| MCM6728BWJ8R MCM6728B MCM6728BWJ10 MCM6728BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 |
524,288-word X 8-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| AK5328192WP-60 |
8,388,608 by 32 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5321024BW AK5321024BZ |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
