| PART |
Description |
Maker |
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| MT4C4004 |
1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| KM44S32030 |
8M x 4Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| HY51VS17403HG HV51V7403HGL-5 HV51V7403HGL-6 HV51V7 |
4M x 4Bit EDO DRAM 4米4位EDO公司的DRAM
|
http://
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| HY57V64420HG HY57V64420HGLT-H HY57V64420HGLT-K HY5 |
4 Banks x 4M x 4Bit Synchronous DRAM
x4 SDRAM
|
http://
Hynix Semiconductor
|
| MAX4605 MAX4606 MAX4605CSE MAX4605CPE MAX4605ESE M |
5＜img src=http://dbserv.maxim-ic.com/images/ohm.gif width=12 height=9.Quad.SPST.CMOS Analog Switches 5Ω、四路、SPST、CMOS模拟开
5з, Quad, SPST, CMOS Analog Switches
5ohm, Quad, SPST, CMOS Analog Switches
5?, Quad, SPST, CMOS Analog Switches
5, Quad, SPST, CMOS Analog Switches
5 / Quad / SPST / CMOS Analog Switches
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
