| PART |
Description |
Maker |
| 2SA1362 |
Silicon PNP Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SC3617 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SA1464 |
PNP Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SC4332-Z |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SD1005 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SC4177 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SD2403 |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SA1462 |
PNP Silicon Epitaxia Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS272TE85R |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| CBS05F30 |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| JDV2S10S |
From old datasheet system TOSHIBA DIODE Silicon Epitaxial Planar Type
|
TOSHIBA[Toshiba Semiconductor]
|