| PART |
Description |
Maker |
| H9530-01 H9530-20 H7260-01 H7260-100 H7260-03 H726 |
LINEAR ARRAY MULTIANODE PMT ASSEMBLY AND MODULE
|
Hamamatsu Corporation
|
| SSO-AD-500NIR-TO52 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| LED1300-35XX |
High Power InGaAsP NIR LED
|
Roithner LaserTechnik G...
|
| ODA-5W-100K |
NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER
|
OptoDiode Corp
|
| H8249-102 H8249 H8249-001 H8249-002 H8249-011 H824 |
Side-on PMT
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| PMT-12V35W1AH PMT-12V35W1AA PMT-12V35W1AG PMT-12V3 |
PMT Panel Mount Power Supply
|
Delta Electronics, Inc.
|
| H9530-20 H9530 H9530-01 |
8 CHANNEL LINEAR ARRAY MULTIANODE PMT ASSEMBLY
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| 1-1600636-7 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL RCPT PMT 6P 8S 2P ( AMP )
|
Tyco Electronics
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| HYM324000GD-60 HYM324000GD-50 |
4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 4M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
CAP 0.5PF 50V /-0.2PF THIN-FILM SN96/AG4/NI 30PPM TR-7-PA
4M x 32 Bit DRAM Module (SO-DIMM)
-4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| X558-5999-Z6-F X5585999Z6-F S5585999Z6-F |
10/100BT MAGNETICS MODULE
10/100BASE-T MODULE
10/100BTBASE-T MODULE
|
Bel Fuse Inc.
|
