| PART |
Description |
Maker |
| ESLB-P245BA ESLB-P245BA-2 ESLB-P245BA-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| RFFM3482E RFFM3482ESR RFFM3482ETR13X RFFM3482ESQ |
2.4GHz TO 2.5GHz SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LT5572EUF LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
|
Linear Technology
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MD59-0044 MD59-0044RTR MD59-0044TR |
Wideband Downconverter 0.7-2.5GHz 宽带变频0.7 - 2.5GHz
|
Weitron International Co., Ltd.
MACOM[Tyco Electronics]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK25V4045_03 MGFK25V4045 MGFK25V404503 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
