| PART |
Description |
Maker |
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
| LS301PDIP |
MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
|
Micross Components
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| C9016-2X C90.6-2X |
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS
|
Hamamatsu Corporation
|
| ECN3021 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| C9016-2X C9547 |
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS 高速门控像增强机组
|
Hamamatsu Photonics K.K.
|
| ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
