| PART |
Description |
Maker |
| HUFA75637P3 HUFA75637S3S HUFA75637S3ST |
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
44A, 100V, 0.030 Ohm, N-Channel, UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp.
|
| FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| STS6NF20V |
N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
|
SGS Thomson Microelectronics
|
| RF1K49157 |
6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET
|
Fairchild Semiconductor
|
| STQ1NE10L STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFETPOWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET POWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|4A（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
|
International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
|
| STP35NF10 STB35NF10 STB35NF10T4 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 100V - 0.030OHM - 40A TO-220 / D2PAK LOW GATE CHARGE STRIPFET⒙ POWER MOSFET
N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.030ohm - 40A 220 / D2PAK封装，低栅极电荷STripFET⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
|
