| PART |
Description |
Maker |
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP
VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX
300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
| CHV2243 CHV2243-99F_00 CHV2243-99F/00 |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| BFG135 |
NPN 7GHz wideband transistor
|
Philips Semiconductors
|
| SY87724L08 SY87724LHEI SY87724LHEY SY87724LHG |
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
