| PART |
Description |
Maker |
| MGF1303B |
Low Noise GaAs FET
|
Mitsubishi Electric Corporation
|
| DAML6188 |
GaAs FET Low Noise Amplifier
|
DAICO[DAICO Industries, Inc.]
|
| SPF-3043 |
Low Noise pHEMT GaAs FET
|
SIRENZA[SIRENZA MICRODEVICES]
|
| CFB0301 PB-CFB0301 CFB0301-000T |
High Dynamic Range Low-Noise GaAs FET
|
Mimix Broadband
|
| CFB0303 |
High Dynamic Range Low-Noise GaAs FET
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
CELERITEK
|
| NE34018 NE34018-TI-64-A NE34018-A NE34018-TI-63-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
CEL[California Eastern Labs]
|
| MGF1903B 1903B |
From old datasheet system
TAPE CARRIER LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| PB-CFK0301-P1-000 PB-CFK0301-P3-000 |
High Dynamic Range Dual, Low Noise GaAs FET 双高动态范围，低噪声砷化镓场效应管
|
Mimix Broadband, Inc.
|
| AD645 AD645S AD645JN AD645SH/883B AD645A |
Low Noise,Low Drift FET OP AMP(低噪低漂FET运算放大
Low Noise, Low Drift FET Op Amp OP-AMP, 1000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8
|
Analog Devices, Inc.
|
