| PART |
Description |
Maker |
| K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC
SSR H/S ZS 600V 70A 4-32VDC
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存
DSUB 25 M PCR/A G
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
256M; 100MHz LVTTL interface SDRAM
|
Elpida Memory
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
| HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| EM6GE16EWXC EM6GE16EWXC-12H |
256M x 16 bit DDR3 Synchronous DRAM
|
EtronTech
|
| UPD23C128040BLGY-MKH UPD23C128040BLGY-MJH UPD23C12 |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
(UPD23C128040BL / UPD23C128080BL) 128M-BIT MASK-PROGRAMMABLE ROM
; Connector Type A:DB37 Male; Connector Type B:DB37 Female; Cable Length:5ft; Approval Bodies:UL; Approval Categories:UL Style 2464 (300V 80 deg C -- cable only); Color:Chrome; For Use With:RS-449 Applications RoHS Compliant: Yes
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:12; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Red RoHS Compliant: Yes
|
NEC Corp.
|
