| PART |
Description |
Maker |
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| NGB8245N |
Gate?Emitter ESD Protection
|
Littelfuse
|
| QIC0620001 |
Dual Common Emitter IGBT Module 200A 600V Per Switch
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRGPC50KD2 IRGPC50KD2-EPBF |
52 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
600V Copack IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IHW40T60 IHW40T60-13 |
IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
|
Infineon Technologies A...
|
| IRGC49B120UB |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| FP35R12W2T4B11 |
EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
54 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
