| PART |
Description |
Maker |
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUFA75631P3 HUFA75631S3ST |
33A, 100V, 0.040 Ohm, N-Channel, UltraFETPower MOSFETs
33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| JANSR2N7410 FN4500 |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HUFA75652G3 |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
|
