| PART |
Description |
Maker |
| US6K1 |
2.5V Drive Nch Nch MOS FET
|
Rohm
|
| 3SK324UG 3SK324 |
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
|
Renesas Electronics Corporation
|
| 2SK3816 2SK3816-1E 2SK3816-DL-1E |
8-bit Withstand Voltage Microcontroller
|
ON Semiconductor
|
| JTV1AS-PA-12V JTV1AS-PA-24V |
Surge withstand voltage: 6kV 1a/1c 30A power relays
Surge withstand voltage 6kV 1a/1c 30A power relays
|
Panasonic Semiconductor
Panasonic Battery Group
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT20M22JVFR |
Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x25 mm; Packaging: Bulk
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT6013B2FLL APT6013LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 43A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
| RTQ045N03TR |
2.5V Drive Nch MOS FET
|
Rohm
|
