| PART |
Description |
Maker |
| 17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| 15971 15971-9 |
HTSNK C LONG. .911 LOW FLOW. THREADED
HTSNK, C LONG. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
| 16285 16285-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C LONG. .4H LOW FLOW, THREADED
HTSNK C LONG. .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| 18030-6 18030 |
HTSNK, C LONG. .4H LOW FLOW, THRU HOLE
BOX 2.4X1.85X.925 W/CLP BLK
|
VICOR[Vicor Corporation]
|
| EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
|
Jingjing Microelectroni...
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
| MC74LCX258DG MC74LCX32DR2 MC74LCX3205 MC74LCX374DR |
Low-Voltage CMOS Octal Buffer Flow Through Pinout; Package: TSSOP 20 LEAD; No of Pins: 20; Container: Tape and Reel; Qty per Container: 2500 LVC/LCX/Z SERIES, 8-BIT DRIVER, INVERTED OUTPUT, PDSO20
Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V−Tolerant Inputs and Outputs (3−State, Inverting)
Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V?Tolerant Inputs and Outputs (3?State, Inverting)
Low-Voltage CMOS Octal D-Type Flip-Flop With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting)
Low-Voltage CMOS Quad 2-Input OR Gate With 5 V?Tolerant Inputs
Low-Voltage CMOS Quad 2-Input Multiplexer With 5 V?Tolerant Inputs and Outputs (3?State, Inverting)
|
ONSEMI[ON Semiconductor]
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
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