PART |
Description |
Maker |
AS5C512K8DJ-12L_IT AS5C512K8DJ-12L_XT AS5C512K8F-1 |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 512K X 8 STANDARD SRAM, 17 ns, CDSO36 CERAMIC, SOJ-36 512K X 8 STANDARD SRAM, 35 ns, CDSO36 CERAMIC, SOJ-36 512K X 8 STANDARD SRAM, 25 ns, CDSO36 CERAMIC, SOJ-36 512K X 8 STANDARD SRAM, 20 ns, CDSO36 CERAMIC, SOJ-36 512K X 8 STANDARD SRAM, 12 ns, CDSO36 CERAMIC, SOJ-36 512K X 8 STANDARD SRAM, 45 ns, CDSO36 CERAMIC, SOJ-36
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Austin Semiconductor, Inc Micross Components AUSTIN SEMICONDUCTOR INC
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM GSI Technology, Inc.
|
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
|
Atmel Corp. Atmel, Corp.
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K6T4008V1C-YB70 K6T4008U1C-MB85 K6T4008U1C-MB10 K6 |
512K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 13.40 MM, STSOP1-32 512K X 8 STANDARD SRAM, 85 ns, PDSO32 512K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Bourns, Inc.
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P4C1049L-70L36MB P4C1049-45JMB P4C1049-55JMB P4C10 |
HIGH SPEED 512K x 8 STATIC CMOS RAM 高速为512k × 8静态CMOS存储 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 20 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 45 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, PDFP36
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM 512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器(为512k × 3600万18 CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
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http:// Yuasa Battery, Inc. Integrated Circuit Technology Corp Microsemi, Corp. Sony, Corp. Sony Corporation
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33LV408RPFE-30 33LV408RPFS-30 33LV408RPFI-30 33LV4 |
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 30 ns, DFP32 4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 30 ns, PDFP32 4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, PDFP32 4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 25 ns, PDFP32 4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 25 ns, DFP32 4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP32
|
Maxwell Technologies, Inc
|
CY7C1012DV3307 CY7C1012DV33-8BGXC |
12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
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