PART |
Description |
Maker |
744305033 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744307012 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744307016 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744304010 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744308015 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744306020 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744301047 |
POWER-CHOKE WE-HCM 1190
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744309025 |
POWER-CHOKE WE-HCM 1390
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
HCMXXX |
HCM Series / High Energy Absorption Cylinder
|
ETC
|
AT45DB041B-SC-2.5 AT45DB041B-TC-2.5 AT45DB041B-TI |
MOSFET N-CH 200V 105A ISOPLUS247 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO28 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. ATMEL Corporation Atmel, Corp.
|
AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM From old datasheet system 1-megabit (64K x 16) 5-volt Only Flash Memory 1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
|
Intel, Corp. Intel Corp.
|