| PART |
Description |
Maker |
| 2SJ625 2SJ625-T1B 2SJ625-T2B |
Pch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| UPA1952 UPA1952TE UPA1952TE-T2 UPA1952TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1914TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1731G-E1 UPA1731G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA1816 UPA1816GR-9JG UPA1816GR-9JG-E2 UPA1816GR-9 |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
CONNECTOR ACCESSORY
|
NEC Corp.
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| SP8J3 |
4V Drive Pch Pch MOS FET
|
Rohm
|
| UPA1970TE UPA1970TE-T2 |
Nch enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA2750GR UPA2750GR-E2 UPA2750GR-E1 |
Nch enhancement-type MOS FET (Dual type)
SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| UPA1803GR-9JG-E1 UPA1803GR-9JG-E2 |
Nch enhancement type MOS FET
|
NEC
|
