| PART |
Description |
Maker |
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system
10 AMPERE COMPLEMENTARY
Darlington Complementary Silicon Power Transistors
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| 2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015
Complementary SlllconPower Translstors
From old datasheet system
|
ON Semiconductor
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
| TIP111 TIP110 TIP117 TIP112 TIP115 TIP116 ON2978 |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Plastic Medium-Power Complementary Silicon Transistors
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| BD778 BD776 BD777 |
Plastic Darlington Complementary Silicon Power Transistors
DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS
|
Motorola Inc
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| RF1K49224 FN4330 |
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 2N3055-D 2N3055/D |
Complementary Silicon Power Transistors 互补硅功率晶体管
Complementary Silicon High-Power Transistors
|
Microsemi, Corp.
ON Semiconductor
|
| 2SB1101 2SB1102 |
(2SB1101 / 2SB1102) LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602
|
Hitachi Semiconductor
|
| RN4987FE |
TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type
|
Toshiba Semiconductor
|
