| PART |
Description |
Maker |
| MPC2104P MPC2104PDG66 MPC2105PDG66 |
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
|
| MPC2003SG50 MPC2003SG60 MPC2003SG66 MPC2002 MPC200 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 9 ns, DMA136
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 14 ns, DMA136
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽，引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| MPC2105CDG66 MPC2106CDG66 MPC2105C |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
|
| M29W400DB |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| M29F400B M29F400T 5127 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
