| PART |
Description |
Maker |
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IXFR24N100 |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| APT4018HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 22A 0.180 Ohm
|
Advanced Power Technology Ltd.
|
| IXFN62N80Q3 |
HiperFETTM Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC[ETC]
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
