| PART |
Description |
Maker |
| IRHNA597260 2129 IRHNA593260 IRHNA597260PBF |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230 |
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
|
IRF[International Rectifier]
|
| S1M-K S1J-K |
1A, 200V - 1000V Surface Mount Rectifiers
|
Taiwan Memory Technolog...
Taiwan Semiconductor Co...
|
| S1M-T |
1A, 200V - 1000V Surface Mount Rectifiers
|
Taiwan Semiconductor Co...
|
| SKFM2045C-D2 |
20.0A Surface Mount Schottky Barrier Rectifiers-20V-200V
|
Formosa MS
|
| ECC1630C-D2 |
16.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V
|
E-CMOS Corporation
|
| RS1M-T |
1A, 200V - 1000V Surface Mount Fast Recovery Rectifier
|
Taiwan Semiconductor Co...
|
| ES2DF |
2A, 200V - 600V Surface Mount Super Fast Rectifiers
|
Taiwan Semiconductor Co...
|
| IRHNJ57230SE JANSR2N7486U3 IRHNJ57230SEPBF IRHNJ57 |
12 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
Simple Drive Requirements
|
IRF[International Rectifier]
|
| IRFE9220 JANTX2N6847U JANTXV2N6847U |
-200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package
HEXFET?TRANSISTORS
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
|
IRF[International Rectifier]
|
| SCDS103 SCDS101 SCDS10112 SCDS102 |
Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
