| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| SD203R25S20PV SD203N SD203N04S10MBC SD203N04S10MBV |
1200V Fast Recovery Diode in a DO-205AB (DO-9) package
2500V Fast Recovery Diode in a DO-205AB (DO-9) package
1600V Fast Recovery Diode in a DO-205AB (DO-9) package
XSTR FET-N DEPL 500V 1K TO243
SEMICONDUCTOR DEVICE, TRANSISTOR, P-CHANNEL MOSFET (SOT-89)
XSTR M N 100V 1.5R 3.0A
,IC, HIGH VOLT EL DRIVER, SO-8
DIODE SCHOTTKY 40V/1A SS14 SMA 快速恢复二极管螺柱版本
TRANSISTOR, DN2540 N-FET S 快速恢复二极管螺柱版本
FAST RECOVERY DIODES Stud Version 快速恢复二极管螺柱版本
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmeshPower MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh?Power MOSFET With FAST DIODE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND ST |
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode)
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode)
N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode)
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| ISL54060IRUZ-T ISL54060IRTZ-T ISL54061 ISL54061IRT |
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Swit
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-TDFN DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO10
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Switch
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-uTQFN T&R DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PQCC10
|
Intersil Corporation
Intersil, Corp.
|
| STB6NA60 4232 STB6NA60-1 |
82V, 1.5KW TRANZORB, 1.5 KE82A, IN6293A
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STY30NA50 |
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
