| PART |
Description |
Maker |
| M366S2953MTS-C75 M366S2953MTS-C1L M366S2953MTS M36 |
128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet PC133/PC100 Unbuffered DIMM From old datasheet system
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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| M366S6453CTS-L1L/C1L M366S6453CTS-L7A/C7A M366S645 |
PC133/PC100 Unbuffered DIMM 2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; PC133/PC100无缓冲DIMM
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
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Hynix Semiconductor
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| M366S1724CT0-C1L M366S1724CT0-C1H |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
| HYS72V32300GU-8-C2 HYS64V32300GU HYS64V32300GU-75- |
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 32MX64 |的CMOS |内存| 168线|塑料 SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 1-bank (ECC); End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 1-bank (ECC); End-of-Life
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INFINEON[Infineon Technologies AG] Infineon Technologies A...
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| HB52D48GB-A6F HB52D48GB-A6FL HB52D48GB-B6F HB52D48 |
32 MB Unbuffered SDRAM Micro DIMM 4-Mword 隆驴 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M 隆驴 16 components) PC100 SDRAM 32 MB Unbuffered SDRAM Micro DIMM 4-Mword × 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M × 16 components) PC100 SDRAM
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Elpida Memory
|
| HB52D328DC-A6B HB52D328DC-A6BL HB52D328DC-B HB52D3 |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword 隆驴 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M 隆驴 16 components) PC100 SDRAM 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC100 SDRAM x64 SDRAM Module
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Elpida Memory
|
| HB52D168GB-A6B HB52D168GB-A6BL HB52D168GB-B HB52D1 |
128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 隆驴 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 隆驴 16 components) PC133/100 SDRAM
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Elpida Memory
|
| HYMD232646B8J-D4 HYMD232646B8J-D43 HYMD232646B8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HYMD232646A8J-D4 HYMD232646A8J-D43 HYMD232646A8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
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Hynix Semiconductor
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
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Hynix Semiconductor http://
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