| PART |
Description |
Maker |
| M48T35AV |
256 KBIT (32KB X8) TIMEKEEPER SRAM
|
ST Microelectronics
|
| M48T35AV-10MH1 M48T35AV-10MH1E M48T35AV-10MH1F M48 |
256 KBIT (32KB X8) TIMEKEEPER SRAM
|
ST Microelectronics
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512-100K6 M27W512-100K6TR |
512 Kbit (64 Kbit x8) low-voltage OTP EPROM
|
STMicroelectronics
|
| M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| M27C512-45XF6 M27C512 M27C512-10B1 M27C512-10B3 M2 |
512 Kbit (64K x8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| PSD835G2_04 PSD835G2 PSD835G2-70UIT PSD835G2-70UT |
Flash PSD, 5V Supply, for 8-bit MCUs 4 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| PSD835G2V_07 PSD835G2V PSD835G2V-120U PSD835G2V-12 |
Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit 256 Kbit dual Flash memories and 64 Kbit SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| PSD834F2V-15M PSD834F2V-20JI PSD834F2V-20MI PSD834 |
FLASH PSD, 3.3V SUPPLY, FOR 8-BIT MCUS 2 MBIT 256 KBIT DUAL FLASH MEMORIES AND 64 KBIT SRAM
|
ST Microelectronics
|
