| PART |
Description |
Maker |
| K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7P161866A K7P163866A |
(K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36
512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
| K7S1636T4C K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7M161835B |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7Q161864B |
(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
