| PART |
Description |
Maker |
| ICS9214 ICS9214YGLF-T |
Rambus XDR Clock Generator
|
Integrated Circuit Systems
|
| HYB25L512160AC-75 HYB25L512160AC |
512MBit Mobile-RAM
|
INFINEON[Infineon Technologies AG]
|
| H55S5132EFR H55S5132EFR-75M |
512Mbit (16Mx32bit) Mobile SDR Memory
|
Hynix Semiconductor
|
| HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| SAK-C505CA-4RC SAK-C505CA-LC C505CA-4RC SAA-C505CA |
8-Bit Microcontrollers - High temperature 8-Bit CMOS microcontroller (T=150°C ) with mask-programmable ROM, bare die, with CAN, (20 MHz)
8-bit Single-Chip Microcontroller (Bare Die Delivery)
|
INFINEON[Infineon Technologies AG]
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 |
; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ST62P30BB6 ST6230B ST62P30BB1 |
IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16
8-BIT MICROCONTROLLER ( MCU ) WITH OTP. ROM. FASTROM. A/D CONVERTER. 16-BIT AUTO-RELOAD TIMER. EEPROM. SPI. UART AND 28 PINS 8位微控制器（MCU）的与检察官办公室。光盘FASTROM。的A / D转换器16位自动重加载定时器EEPROM中。的SPIUART8个引
|
Cypress Semiconductor, Corp.
|
