| PART |
Description |
Maker |
| K4S56163LC-RFR |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE- |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
TriQuint Semiconductor, Inc.
Jameco Electronics
Anpec Electronics, Corp.
SAMSUNG[Samsung semiconductor]
|
| HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
| TBS6416B4E TBS6416B4E-7G |
1M x 16Bit x 4 Banks synchronous DRAM
|
List of Unclassifed Manufacturers
ETC
|
| K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
