| PART |
Description |
Maker |
| DTB713ZM DTB713ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
http://
ROHM[Rohm]
|
| DTB713ZE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD723YM DTD723YE |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 30A02MH-TL-E |
Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| NSV40200LT1G NTB75N03L09T4G NSV1C300ET4G NTD2955PT |
40 V, 4.0 A, Low VCE(sat) PNP Transistor
Power MOSFET 75 Amps, 30 Volts
100 V, 3.0 A, Low VCE(sat) PNP Transistor
|
ON Semiconductor
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
